Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions

• Main Authors: Jhen-Yong Hong, Chen-Feng Hung, Kui-Hon Ou Yang, Kuan-Chia Chiu, Dah-Chin Ling, Wen-Chung Chiang, Minn-Tsong Lin
• Format: Article
• Language: English
• Published: Nature Publishing Group 2021-03-01
• Series: Scientific Reports
• Online Access: https://doi.org/10.1038/s41598-021-84749-x

Abstract We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the $$\text{AlO}_{x}$$ AlO x layer. The role played by oxygen vacancies in $$\text{AlO}_{x}$$ AlO x is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single $$\text{AlO}_{x}$$ AlO x -based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices.