Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores

This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to ther...

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Main Authors: Y.K. Sa, Junghwan Bang, Junhyuk Son, Dong-Yurl Yu, Yun-Chan Kim
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/9/2284
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spelling doaj-6aa3e13a4183414294f28a78fdab33062021-04-28T23:04:31ZengMDPI AGMaterials1996-19442021-04-01142284228410.3390/ma14092284Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular PoresY.K. Sa0Junghwan Bang1Junhyuk Son2Dong-Yurl Yu3Yun-Chan Kim4Advanced Deposition Materials Business Unit, Entegris, Suwon 16229, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaThis paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e., ultralow-k). Specifically, the elastic modulus measured by nano-indentation was 13 GPa, which was substantially higher than the value of 6 GPa for a porous low-k film deposited by a conventional method, while dielectric constant exhibited an identical value of 2.1. They also showed excellent resistance against viscoplastic deformation, as measured by the ball indentation method, which represented the degree of chemical degradation of the internal bonds. Indentation depth was measured at 5 nm after a 4-h indentation test at 400 °C, which indicated an ~89% decrease compared with conventional SiCOH film. Evolution of film shrinkage and dielectric constant after annealing and plasma exposure were reduced in the low-k film with a self-organized molecular film. Analysis of the film structure via Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) indicated an increase in symmetric linear Si–O–Si molecular chains with terminal –CH<sub>3</sub> bonds that were believed to be responsible for both the decrease in dipole moment/dielectric constant and the formation of molecular scaled pores. The observed enhanced mechanical and chemical properties were also attributed to this unique nano-porous structure.https://www.mdpi.com/1996-1944/14/9/2284porous low-k (PLK)SiCOH dielectric thin filmnano-porous structureCu/low-k interconnect structure
collection DOAJ
language English
format Article
sources DOAJ
author Y.K. Sa
Junghwan Bang
Junhyuk Son
Dong-Yurl Yu
Yun-Chan Kim
spellingShingle Y.K. Sa
Junghwan Bang
Junhyuk Son
Dong-Yurl Yu
Yun-Chan Kim
Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores
Materials
porous low-k (PLK)
SiCOH dielectric thin film
nano-porous structure
Cu/low-k interconnect structure
author_facet Y.K. Sa
Junghwan Bang
Junhyuk Son
Dong-Yurl Yu
Yun-Chan Kim
author_sort Y.K. Sa
title Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores
title_short Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores
title_full Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores
title_fullStr Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores
title_full_unstemmed Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores
title_sort enhanced thermo–mechanical reliability of ultralow-k dielectrics with self-organized molecular pores
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2021-04-01
description This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e., ultralow-k). Specifically, the elastic modulus measured by nano-indentation was 13 GPa, which was substantially higher than the value of 6 GPa for a porous low-k film deposited by a conventional method, while dielectric constant exhibited an identical value of 2.1. They also showed excellent resistance against viscoplastic deformation, as measured by the ball indentation method, which represented the degree of chemical degradation of the internal bonds. Indentation depth was measured at 5 nm after a 4-h indentation test at 400 °C, which indicated an ~89% decrease compared with conventional SiCOH film. Evolution of film shrinkage and dielectric constant after annealing and plasma exposure were reduced in the low-k film with a self-organized molecular film. Analysis of the film structure via Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) indicated an increase in symmetric linear Si–O–Si molecular chains with terminal –CH<sub>3</sub> bonds that were believed to be responsible for both the decrease in dipole moment/dielectric constant and the formation of molecular scaled pores. The observed enhanced mechanical and chemical properties were also attributed to this unique nano-porous structure.
topic porous low-k (PLK)
SiCOH dielectric thin film
nano-porous structure
Cu/low-k interconnect structure
url https://www.mdpi.com/1996-1944/14/9/2284
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