Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores
This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to ther...
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doaj-6aa3e13a4183414294f28a78fdab33062021-04-28T23:04:31ZengMDPI AGMaterials1996-19442021-04-01142284228410.3390/ma14092284Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular PoresY.K. Sa0Junghwan Bang1Junhyuk Son2Dong-Yurl Yu3Yun-Chan Kim4Advanced Deposition Materials Business Unit, Entegris, Suwon 16229, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaMicro-Joining Center, Korea Institute of Industrial Technology, 156 Gaetbeol-Ro, Yeonsu-Gu, Incheon 406-840, KoreaThis paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e., ultralow-k). Specifically, the elastic modulus measured by nano-indentation was 13 GPa, which was substantially higher than the value of 6 GPa for a porous low-k film deposited by a conventional method, while dielectric constant exhibited an identical value of 2.1. They also showed excellent resistance against viscoplastic deformation, as measured by the ball indentation method, which represented the degree of chemical degradation of the internal bonds. Indentation depth was measured at 5 nm after a 4-h indentation test at 400 °C, which indicated an ~89% decrease compared with conventional SiCOH film. Evolution of film shrinkage and dielectric constant after annealing and plasma exposure were reduced in the low-k film with a self-organized molecular film. Analysis of the film structure via Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) indicated an increase in symmetric linear Si–O–Si molecular chains with terminal –CH<sub>3</sub> bonds that were believed to be responsible for both the decrease in dipole moment/dielectric constant and the formation of molecular scaled pores. The observed enhanced mechanical and chemical properties were also attributed to this unique nano-porous structure.https://www.mdpi.com/1996-1944/14/9/2284porous low-k (PLK)SiCOH dielectric thin filmnano-porous structureCu/low-k interconnect structure |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Y.K. Sa Junghwan Bang Junhyuk Son Dong-Yurl Yu Yun-Chan Kim |
spellingShingle |
Y.K. Sa Junghwan Bang Junhyuk Son Dong-Yurl Yu Yun-Chan Kim Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores Materials porous low-k (PLK) SiCOH dielectric thin film nano-porous structure Cu/low-k interconnect structure |
author_facet |
Y.K. Sa Junghwan Bang Junhyuk Son Dong-Yurl Yu Yun-Chan Kim |
author_sort |
Y.K. Sa |
title |
Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores |
title_short |
Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores |
title_full |
Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores |
title_fullStr |
Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores |
title_full_unstemmed |
Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores |
title_sort |
enhanced thermo–mechanical reliability of ultralow-k dielectrics with self-organized molecular pores |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2021-04-01 |
description |
This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e., ultralow-k). Specifically, the elastic modulus measured by nano-indentation was 13 GPa, which was substantially higher than the value of 6 GPa for a porous low-k film deposited by a conventional method, while dielectric constant exhibited an identical value of 2.1. They also showed excellent resistance against viscoplastic deformation, as measured by the ball indentation method, which represented the degree of chemical degradation of the internal bonds. Indentation depth was measured at 5 nm after a 4-h indentation test at 400 °C, which indicated an ~89% decrease compared with conventional SiCOH film. Evolution of film shrinkage and dielectric constant after annealing and plasma exposure were reduced in the low-k film with a self-organized molecular film. Analysis of the film structure via Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) indicated an increase in symmetric linear Si–O–Si molecular chains with terminal –CH<sub>3</sub> bonds that were believed to be responsible for both the decrease in dipole moment/dielectric constant and the formation of molecular scaled pores. The observed enhanced mechanical and chemical properties were also attributed to this unique nano-porous structure. |
topic |
porous low-k (PLK) SiCOH dielectric thin film nano-porous structure Cu/low-k interconnect structure |
url |
https://www.mdpi.com/1996-1944/14/9/2284 |
work_keys_str_mv |
AT yksa enhancedthermomechanicalreliabilityofultralowkdielectricswithselforganizedmolecularpores AT junghwanbang enhancedthermomechanicalreliabilityofultralowkdielectricswithselforganizedmolecularpores AT junhyukson enhancedthermomechanicalreliabilityofultralowkdielectricswithselforganizedmolecularpores AT dongyurlyu enhancedthermomechanicalreliabilityofultralowkdielectricswithselforganizedmolecularpores AT yunchankim enhancedthermomechanicalreliabilityofultralowkdielectricswithselforganizedmolecularpores |
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