Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures
We report on large-distance rf-magnetron sputtering as a competitive alternative to pulsed laser deposition and off-axis sputtering for the growth of epitaxial PbZr0.52Ti0.48O3 (PZT) thin films. To determine the characteristics of the PZT films, the studies were focused on the interplay between micr...
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2012-09-01
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Online Access: | http://dx.doi.org/10.1063/1.4756997 |
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doaj-69ff964dbbb44f7c811a7b97bddddd802020-11-24T21:47:53ZengAIP Publishing LLCAIP Advances2158-32262012-09-0123032184032184-1110.1063/1.4756997084203ADVFerroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructuresPhilipp M. Leufke0Robert Kruk1Di Wang2Christian Kübel3Horst Hahn4Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Karlsruhe, GermanyInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Karlsruhe, GermanyInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Karlsruhe, GermanyInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Karlsruhe, GermanyInstitute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Karlsruhe, GermanyWe report on large-distance rf-magnetron sputtering as a competitive alternative to pulsed laser deposition and off-axis sputtering for the growth of epitaxial PbZr0.52Ti0.48O3 (PZT) thin films. To determine the characteristics of the PZT films, the studies were focused on the interplay between microstructural and ferroelectric properties. The films were deposited on insulating or conducting (Nb-doped) SrTiO3 and MgO substrates with La0.83Sr0.17MnO3 as bottom electrode. The uniformity and homogeneity of the samples was demonstrated by using large area (1.0 mm2) top electrodes. It is shown that epitaxial heterostructures of excellent crystalline and ferroelectric quality can be deposited from a stoichiometric PZT target without the need for excess PbO in the target or post-annealing of the samples.http://dx.doi.org/10.1063/1.4756997 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Philipp M. Leufke Robert Kruk Di Wang Christian Kübel Horst Hahn |
spellingShingle |
Philipp M. Leufke Robert Kruk Di Wang Christian Kübel Horst Hahn Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures AIP Advances |
author_facet |
Philipp M. Leufke Robert Kruk Di Wang Christian Kübel Horst Hahn |
author_sort |
Philipp M. Leufke |
title |
Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures |
title_short |
Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures |
title_full |
Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures |
title_fullStr |
Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures |
title_full_unstemmed |
Ferroelectric vs. structural properties of large-distance sputtered epitaxial LSMO/PZT heterostructures |
title_sort |
ferroelectric vs. structural properties of large-distance sputtered epitaxial lsmo/pzt heterostructures |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2012-09-01 |
description |
We report on large-distance rf-magnetron sputtering as a competitive alternative to pulsed laser deposition and off-axis sputtering for the growth of epitaxial PbZr0.52Ti0.48O3 (PZT) thin films. To determine the characteristics of the PZT films, the studies were focused on the interplay between microstructural and ferroelectric properties. The films were deposited on insulating or conducting (Nb-doped) SrTiO3 and MgO substrates with La0.83Sr0.17MnO3 as bottom electrode. The uniformity and homogeneity of the samples was demonstrated by using large area (1.0 mm2) top electrodes. It is shown that epitaxial heterostructures of excellent crystalline and ferroelectric quality can be deposited from a stoichiometric PZT target without the need for excess PbO in the target or post-annealing of the samples. |
url |
http://dx.doi.org/10.1063/1.4756997 |
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