Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

<p>Abstract</p> <p>We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown...

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Bibliographic Details
Main Authors:	Jo Masafumi, Duan Guotao, Mano Takaaki, Sakoda Kazuaki
Format:	Article
Language:	English
Published:	SpringerOpen 2011-01-01
Series:	Nanoscale Research Letters
Online Access:	http://www.nanoscalereslett.com/content/6/1/76

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