Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

<p>Abstract</p> <p>We study the effects of low-temperature capping (200-450&#176;C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown...

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Main Authors: Jo Masafumi, Duan Guotao, Mano Takaaki, Sakoda Kazuaki
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/76
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spelling doaj-69eea9647cee491eafaa4fc64fa4ede12020-11-24T21:53:05ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-016176Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wellsJo MasafumiDuan GuotaoMano TakaakiSakoda Kazuaki<p>Abstract</p> <p>We study the effects of low-temperature capping (200-450&#176;C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200&#176;C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350&#176;C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200&#176;C-capped sample.</p> http://www.nanoscalereslett.com/content/6/1/76
collection DOAJ
language English
format Article
sources DOAJ
author Jo Masafumi
Duan Guotao
Mano Takaaki
Sakoda Kazuaki
spellingShingle Jo Masafumi
Duan Guotao
Mano Takaaki
Sakoda Kazuaki
Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
Nanoscale Research Letters
author_facet Jo Masafumi
Duan Guotao
Mano Takaaki
Sakoda Kazuaki
author_sort Jo Masafumi
title Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_short Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_full Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_fullStr Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_full_unstemmed Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
title_sort effects of low-temperature capping on the optical properties of gaas/algaas quantum wells
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2011-01-01
description <p>Abstract</p> <p>We study the effects of low-temperature capping (200-450&#176;C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200&#176;C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350&#176;C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200&#176;C-capped sample.</p>
url http://www.nanoscalereslett.com/content/6/1/76
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AT duanguotao effectsoflowtemperaturecappingontheopticalpropertiesofgaasalgaasquantumwells
AT manotakaaki effectsoflowtemperaturecappingontheopticalpropertiesofgaasalgaasquantumwells
AT sakodakazuaki effectsoflowtemperaturecappingontheopticalpropertiesofgaasalgaasquantumwells
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