Enhancement of Single-Photon Emission Rate from InGaAs/GaAs Quantum-Dot/Nanowire Heterostructure by Wire-Groove Nanocavity

• Main Authors: Wei Wei, Xin Yan, Jie Liu, Bing Shen, Wei Luo, Xiaofeng Ma, Xia Zhang
• Format: Article
• Language: English
• Published: MDPI AG 2019-05-01
• Series: Nanomaterials
• Subjects: quantum dot; nanowire; single photon; cavity quantum electrodynamics
• Online Access: https://www.mdpi.com/2079-4991/9/5/671

Spontaneous emission of luminescent material is strongly dependent on the surrounding electromagnetic environment. To enhance the emission rate of a single-photon emitter, we proposed a wire-groove resonant nanocavity around the single-photon emitter. An InGaAs quantum dot embedded in a GaAs nanowire was employed as a site-control single-photon emitter. The nanoscale cavity built by a wire-groove perpendicular to the quantum dot with an extremely narrow width of 10 nm exhibited an extremely small volume of 10 × 40 × 259 nm³. Theoretical analysis showed that the emission rate of the quantum dot was dramatically enhanced by 617x due to the Purcell effect induced by the wire-groove cavity. A fast single-photon emitter with a rate of 50.2 GHz can be obtained that speeds up the data rate of the single-photon emitter. This ultrafast single-photon source would be of great significance in quantum information systems and networks.