Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate

Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate

Fabricating GaN-based light-emitting diodes (LEDs) on a silicon (Si) substrate, which is compatible with the widely employed complementary metal–oxide–semiconductor (CMOS) circuits, is extremely important for next-generation high-performance electroluminescence devices. We conducted a systematic inv...

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Bibliographic Details
Main Authors: Yu Lei, Hui Wan, Bin Tang, Shuyu Lan, Jiahao Miao, Zehong Wan, Yingce Liu, Shengjun Zhou
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Crystals
Subjects:
vertical light-emitting diodes
stress state
integrated surface textures
optical performance
Online Access:https://www.mdpi.com/2073-4352/10/7/621

Internet

https://www.mdpi.com/2073-4352/10/7/621

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