Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogene...
Main Authors: | Jayanta Bhattacharjee, Sahadeb Ghosh, Preeti Pokhriyal, Rashmi Gangwar, Rajeev Dutt, Archna Sagdeo, Pragya Tiwari, S. D. Singh |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2021-07-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0055874 |
Similar Items
-
Radiation damage assessment in AlxGa1-xAs
by: Allman, D. M.
Published: (1990) -
Ion beam synthesis of AlxGa[1-x]As
by: Kamil, Emad Abbas
Published: (1991) -
Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region
by: Konstantinos Papatryfonos, et al.
Published: (2021-02-01) -
Measurement for Thermal Effusivity of AlxGa1-xN Alloys Using Thermoreflectance with Periodic Heating
by: Shibata, Hiroyuki, et al.
Published: (2010-12-01) -
A study on bowing parameter of semiconductor material for Ga1-x AlxAs alloys
by: XIE, ZHEN-ZHE, et al.
Published: (1989)