Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature

Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature

In this work, we present the study of the atomic composition in amorphous Si<sub>X</sub>Ge<sub>Y</sub>:H<sub>Z</sub> films deposited by radio frequency (RF&#8212;13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms...

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Bibliographic Details
Main Authors: Ismael Cosme, Andrey Kosarev, Saraí Zarate-Galvez, Hiram E. Martinez, Svetlana Mansurova, Yuri Kudriavtsev
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Materials
Subjects:
alloys
silicon-germanium
hydrogen dilution
rf pecvd
Online Access:https://www.mdpi.com/1996-1944/13/5/1045

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