n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices

Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in wa...

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Main Authors: Hikmat S. Hilal, Moayyad Masoud, Samar Shakhshir, Najeh Jisraw
Format: Article
Language:English
Published: Hindawi Limited 2003-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/APEC.26.11
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spelling doaj-67687f0018da48c28d9a575dd8294b262020-11-25T02:51:14ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312003-01-01261112110.1155/APEC.26.11n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane MatricesHikmat S. Hilal0Moayyad Masoud1Samar Shakhshir2Najeh Jisraw3Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityTetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.http://dx.doi.org/10.1155/APEC.26.11
collection DOAJ
language English
format Article
sources DOAJ
author Hikmat S. Hilal
Moayyad Masoud
Samar Shakhshir
Najeh Jisraw
spellingShingle Hikmat S. Hilal
Moayyad Masoud
Samar Shakhshir
Najeh Jisraw
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Active and Passive Electronic Components
author_facet Hikmat S. Hilal
Moayyad Masoud
Samar Shakhshir
Najeh Jisraw
author_sort Hikmat S. Hilal
title n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
title_short n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
title_full n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
title_fullStr n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
title_full_unstemmed n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
title_sort n-gaas band-edge repositioning by modification with metalloporphyrin/polysiloxane matrices
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2003-01-01
description Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.
url http://dx.doi.org/10.1155/APEC.26.11
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