n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in wa...
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/APEC.26.11 |
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doaj-67687f0018da48c28d9a575dd8294b262020-11-25T02:51:14ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312003-01-01261112110.1155/APEC.26.11n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane MatricesHikmat S. Hilal0Moayyad Masoud1Samar Shakhshir2Najeh Jisraw3Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityDepartment of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian AuthorityTetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64− system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.http://dx.doi.org/10.1155/APEC.26.11 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hikmat S. Hilal Moayyad Masoud Samar Shakhshir Najeh Jisraw |
spellingShingle |
Hikmat S. Hilal Moayyad Masoud Samar Shakhshir Najeh Jisraw n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices Active and Passive Electronic Components |
author_facet |
Hikmat S. Hilal Moayyad Masoud Samar Shakhshir Najeh Jisraw |
author_sort |
Hikmat S. Hilal |
title |
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
title_short |
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
title_full |
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
title_fullStr |
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
title_full_unstemmed |
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices |
title_sort |
n-gaas band-edge repositioning by modification with metalloporphyrin/polysiloxane matrices |
publisher |
Hindawi Limited |
series |
Active and Passive Electronic Components |
issn |
0882-7516 1563-5031 |
publishDate |
2003-01-01 |
description |
Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII
and MnII
mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n
-GaAs wafers. The n-GaAs/polymer/MnP
system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64−
system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water. |
url |
http://dx.doi.org/10.1155/APEC.26.11 |
work_keys_str_mv |
AT hikmatshilal ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices AT moayyadmasoud ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices AT samarshakhshir ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices AT najehjisraw ngaasbandedgerepositioningbymodificationwithmetalloporphyrinpolysiloxanematrices |
_version_ |
1724735608319901696 |