n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n -GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in wa...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2003-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.26.11 |
| Summary: | Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII
and MnII
mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n
-GaAs wafers. The n-GaAs/polymer/MnP
system was annealed under nitrogen and used for photoelectrochemical study in water/LiCIO4/Fe(CN)63-/Fe(CN)64−
system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water. |
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| ISSN: | 0882-7516 1563-5031 |