One-dimensional edge contact to encapsulated MoS2 with a superconductor

One-dimensional edge contact to encapsulated MoS2 with a superconductor

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress...

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Main Authors: A. Seredinski, E. G. Arnault, V. Z. Costa, L. Zhao, T. F. Q. Larson, K. Watanabe, T. Taniguchi, F. Amet, A. K. M. Newaz, G. Finkelstein
Format: Article
Language:English
Published: AIP Publishing LLC 2021-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0045009
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spelling doaj-667651ba44da45fbadab9090455d1d502021-05-04T14:07:18ZengAIP Publishing LLCAIP Advances2158-32262021-04-01114045312045312-510.1063/5.0045009One-dimensional edge contact to encapsulated MoS2 with a superconductorA. Seredinski0E. G. Arnault1V. Z. Costa2L. Zhao3T. F. Q. Larson4K. Watanabe5T. Taniguchi6F. Amet7A. K. M. Newaz8G. Finkelstein9School of Sciences and Humanities, Wentworth Institute of Technology, Boston, Massachusetts 02115, USADepartment of Physics, Duke University, Durham, North Carolina 27708, USADepartment of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, USADepartment of Physics, Duke University, Durham, North Carolina 27708, USADepartment of Physics, Duke University, Durham, North Carolina 27708, USANational Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanNational Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanDepartment of Physics and Astronomy, Appalachian State University, Boone, North Carolina 28607, USADepartment of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, USADepartment of Physics, Duke University, Durham, North Carolina 27708, USAEstablishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.http://dx.doi.org/10.1063/5.0045009
collection DOAJ
language English
format Article
sources DOAJ
author A. Seredinski
E. G. Arnault
V. Z. Costa
L. Zhao
T. F. Q. Larson
K. Watanabe
T. Taniguchi
F. Amet
A. K. M. Newaz
G. Finkelstein
spellingShingle A. Seredinski
E. G. Arnault
V. Z. Costa
L. Zhao
T. F. Q. Larson
K. Watanabe
T. Taniguchi
F. Amet
A. K. M. Newaz
G. Finkelstein
One-dimensional edge contact to encapsulated MoS2 with a superconductor
AIP Advances
author_facet A. Seredinski
E. G. Arnault
V. Z. Costa
L. Zhao
T. F. Q. Larson
K. Watanabe
T. Taniguchi
F. Amet
A. K. M. Newaz
G. Finkelstein
author_sort A. Seredinski
title One-dimensional edge contact to encapsulated MoS2 with a superconductor
title_short One-dimensional edge contact to encapsulated MoS2 with a superconductor
title_full One-dimensional edge contact to encapsulated MoS2 with a superconductor
title_fullStr One-dimensional edge contact to encapsulated MoS2 with a superconductor
title_full_unstemmed One-dimensional edge contact to encapsulated MoS2 with a superconductor
title_sort one-dimensional edge contact to encapsulated mos2 with a superconductor
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2021-04-01
description Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.
url http://dx.doi.org/10.1063/5.0045009
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