Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model

Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model

Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFE...

Full description

Bibliographic Details
Main Authors: Taegeon Kim, Changhwan Shin
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Electronics
Subjects:
ferroelectric
negative capacitance
phase field simulation
interface trap
steep-slope transistor
multidomain
Online Access:https://www.mdpi.com/2079-9292/9/12/2141
id doaj-66360ce9660c48868640274792714626
record_format Article
spelling doaj-66360ce9660c488686402747927146262020-12-15T00:02:37ZengMDPI AGElectronics2079-92922020-12-0192141214110.3390/electronics9122141Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field ModelTaegeon Kim0Changhwan Shin1Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, KoreaFerroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFET), are based on the use of ferroelectric materials. In this work, using a multidomain 3D phase field model (based on the time-dependent Ginzburg–Landau equation), we investigate the impact of the interface-trapped charge (Q<sub>it</sub>) on the transient negative capacitance in a ferroelectric capacitor (i.e., metal/Zr-HfO<sub>2</sub>/heavily doped Si) in series with a resistor. The simulation results show that the interface trap reinforces the effect of transient negative capacitance.https://www.mdpi.com/2079-9292/9/12/2141ferroelectricnegative capacitancephase field simulationinterface trapsteep-slope transistormultidomain
collection DOAJ
language English
format Article
sources DOAJ
author Taegeon Kim
Changhwan Shin
spellingShingle Taegeon Kim
Changhwan Shin
Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
Electronics
ferroelectric
negative capacitance
phase field simulation
interface trap
steep-slope transistor
multidomain
author_facet Taegeon Kim
Changhwan Shin
author_sort Taegeon Kim
title Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
title_short Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
title_full Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
title_fullStr Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
title_full_unstemmed Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
title_sort effects of interface trap on transient negative capacitance effect: phase field model
publisher MDPI AG
series Electronics
issn 2079-9292
publishDate 2020-12-01
description Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFET), are based on the use of ferroelectric materials. In this work, using a multidomain 3D phase field model (based on the time-dependent Ginzburg–Landau equation), we investigate the impact of the interface-trapped charge (Q<sub>it</sub>) on the transient negative capacitance in a ferroelectric capacitor (i.e., metal/Zr-HfO<sub>2</sub>/heavily doped Si) in series with a resistor. The simulation results show that the interface trap reinforces the effect of transient negative capacitance.
topic ferroelectric
negative capacitance
phase field simulation
interface trap
steep-slope transistor
multidomain
url https://www.mdpi.com/2079-9292/9/12/2141
work_keys_str_mv AT taegeonkim effectsofinterfacetrapontransientnegativecapacitanceeffectphasefieldmodel
AT changhwanshin effectsofinterfacetrapontransientnegativecapacitanceeffectphasefieldmodel
_version_ 1724383133034348544

Similar Items