A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance

We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same dir...

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Main Authors:	Qianyu Hou, Haifan You, Qing Cai, Hui Guo, Pengfei Shao, Danfeng Pan, Le Yu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Format:	Article
Language:	English
Published:	IEEE 2021-01-01
Series:	IEEE Photonics Journal
Subjects:	AlGaN narrow-band photodiodes polarization responsivity quantum efficiency
Online Access:	https://ieeexplore.ieee.org/document/9447915/

id	doaj-661b5dcf48e5488392a2ced68ba5ff04
record_format	Article
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Qianyu Hou Haifan You Qing Cai Hui Guo Pengfei Shao Danfeng Pan Le Yu Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
spellingShingle	Qianyu Hou Haifan You Qing Cai Hui Guo Pengfei Shao Danfeng Pan Le Yu Dunjun Chen Hai Lu Rong Zhang Youdou Zheng A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance IEEE Photonics Journal AlGaN narrow-band photodiodes polarization responsivity quantum efficiency
author_facet	Qianyu Hou Haifan You Qing Cai Hui Guo Pengfei Shao Danfeng Pan Le Yu Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
author_sort	Qianyu Hou
title	A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance
title_short	A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance
title_full	A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance
title_fullStr	A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance
title_full_unstemmed	A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance
title_sort	high quantum efficiency narrow-band uv-b algan p-i-n photodiode with polarization assistance
publisher	IEEE
series	IEEE Photonics Journal
issn	1943-0655
publishDate	2021-01-01
description	We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same direction with the applied bias field was introduced to the absorption layer by adjusting the Al composition ratio between the p-type AlGaN layer and i-type AlGaN absorption layer. The polarization enhanced narrow-band PD exhibited a higher external quantum efficiency (EQE) of 82% than the conventional one with an EQE of 67%. Meanwhile, a low dark current density of 1.7 nA/cm<sup>2</sup> and four orders of magnitude UV-visible rejection ratio were achieved for the enhanced narrow-band PDs with a maximum photocurrent responsivity of 202 mA/W at 304 nm.
topic	AlGaN narrow-band photodiodes polarization responsivity quantum efficiency
url	https://ieeexplore.ieee.org/document/9447915/
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spelling	doaj-661b5dcf48e5488392a2ced68ba5ff042021-06-24T23:00:05ZengIEEEIEEE Photonics Journal1943-06552021-01-011331810.1109/JPHOT.2021.30868559447915A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization AssistanceQianyu Hou0https://orcid.org/0000-0002-8090-045XHaifan You1https://orcid.org/0000-0003-0099-6074Qing Cai2Hui Guo3Pengfei Shao4Danfeng Pan5Le Yu6Dunjun Chen7Hai Lu8https://orcid.org/0000-0002-9835-6763Rong Zhang9Youdou Zheng10Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Microfabrication and Integration Technology Center, Nanjing University, Nanjing, ChinaWe designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same direction with the applied bias field was introduced to the absorption layer by adjusting the Al composition ratio between the p-type AlGaN layer and i-type AlGaN absorption layer. The polarization enhanced narrow-band PD exhibited a higher external quantum efficiency (EQE) of 82% than the conventional one with an EQE of 67%. Meanwhile, a low dark current density of 1.7 nA/cm<sup>2</sup> and four orders of magnitude UV-visible rejection ratio were achieved for the enhanced narrow-band PDs with a maximum photocurrent responsivity of 202 mA/W at 304 nm.https://ieeexplore.ieee.org/document/9447915/AlGaNnarrow-bandphotodiodespolarizationresponsivityquantum efficiency

A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance

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