High frequency realization of non-autonomous nonlinear transistor circuit
In this paper, an electronic implementation of a non-autonomous nonlinear transistor circuit is presented. This nonlinear circuit topology requires a minimal number of components, which consists of two resistors, two capacitors, and a single NPN bipolar junction transistor (BJT). This topology is of...
Main Authors: | Benjamin K. Rhea, Edmon Perkins, Robert N. Dean |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-06-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5100948 |
Similar Items
-
Non-Foster Circuits Realized by Transistor Negative-Impedance Converters
by: Skye Huihsin Wu, et al.
Published: (2016) -
Realization of the Logic Circuit through Organic Ambipolar Field-Effect Transistors
by: 陳富港
Published: (2011) -
Nonlinear bipolar transistor modelling for high frequency amplifiers
by: Redfern, S. W.
Published: (1983) -
Circuit Realization and Control for Nonlinear Behavior of Regenerative Vibration
by: Zhen-Hong Liao, et al.
Published: (2017) -
Realization of the Logic Circuit through Organic Unipolar and Ambipolar Field-Effect Transistors
by: Chu, Li-Fen, et al.
Published: (2009)