The structural characterisation of HWCVD-deposited nanocrystalline silicon films
Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalli...
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| Format: | Article |
| Language: | English |
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Academy of Science of South Africa
2009-12-01
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| Series: | South African Journal of Science |
| Online Access: | http://archive.sajs.co.za/index.php/SAJS/article/view/41 |
| Summary: | Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30–50% and the nc-Si crystallite size was in the range 20–35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm. |
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| ISSN: | 0038-2353 1996-7489 |