Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application

Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application

We present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications. It is implemented in a zero-change standard 0.18-μm complementary metal oxide semiconductor process at the mini...

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Main Authors: Jinsoo Rhim, Xiaoge Zeng, Zhihong Huang, Sai Rahul Chalamalasetti, Marco Fiorentino, Raymond Beausoleil, Myung-Jae Lee
Format: Article
Language:English
Published: MDPI AG 2019-06-01
Series:Instruments
Subjects:
single photon avalanche diode
monolithic integration
zero-change standard CMOS technology
Online Access:https://www.mdpi.com/2410-390X/3/2/33
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spelling doaj-64b927b76bad468b870f4c7939cc0bcf2020-11-25T02:45:32ZengMDPI AGInstruments2410-390X2019-06-01323310.3390/instruments3020033instruments3020033Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR ApplicationJinsoo Rhim0Xiaoge Zeng1Zhihong Huang2Sai Rahul Chalamalasetti3Marco Fiorentino4Raymond Beausoleil5Myung-Jae Lee6Hewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA 94304, USAHewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA 94304, USAHewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA 94304, USAHewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA 94304, USAHewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA 94304, USAHewlett Packard Labs, Hewlett Packard Enterprise, Palo Alto, CA 94304, USACenter for Optoelectronic Materials and Devices, Korea Institue of Science and Technology (KIST), Seoul 02792, KoreaWe present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications. It is implemented in a zero-change standard 0.18-μm complementary metal oxide semiconductor process at the minimum cost by excluding any additional processing step for customized doping profiles. The SPAD is based on circular shaped P+/N-well junction of 8-μm diameter, and it achieves low breakdown voltage below 10 V so that the operation voltage of the single-photon sensor can be minimized. The quenching and reset circuit is integrated monolithically to capture photon-generated output pulses for measurement. A complete characterization of our single-photon sensor is provided.https://www.mdpi.com/2410-390X/3/2/33single photon avalanche diodemonolithic integrationzero-change standard CMOS technology
collection DOAJ
language English
format Article
sources DOAJ
author Jinsoo Rhim
Xiaoge Zeng
Zhihong Huang
Sai Rahul Chalamalasetti
Marco Fiorentino
Raymond Beausoleil
Myung-Jae Lee
spellingShingle Jinsoo Rhim
Xiaoge Zeng
Zhihong Huang
Sai Rahul Chalamalasetti
Marco Fiorentino
Raymond Beausoleil
Myung-Jae Lee
Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application
Instruments
single photon avalanche diode
monolithic integration
zero-change standard CMOS technology
author_facet Jinsoo Rhim
Xiaoge Zeng
Zhihong Huang
Sai Rahul Chalamalasetti
Marco Fiorentino
Raymond Beausoleil
Myung-Jae Lee
author_sort Jinsoo Rhim
title Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application
title_short Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application
title_full Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application
title_fullStr Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application
title_full_unstemmed Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application
title_sort monolithically-integrated single-photon avalanche diode in a zero-change standard cmos process for low-cost and low-voltage lidar application
publisher MDPI AG
series Instruments
issn 2410-390X
publishDate 2019-06-01
description We present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications. It is implemented in a zero-change standard 0.18-μm complementary metal oxide semiconductor process at the minimum cost by excluding any additional processing step for customized doping profiles. The SPAD is based on circular shaped P+/N-well junction of 8-μm diameter, and it achieves low breakdown voltage below 10 V so that the operation voltage of the single-photon sensor can be minimized. The quenching and reset circuit is integrated monolithically to capture photon-generated output pulses for measurement. A complete characterization of our single-photon sensor is provided.
topic single photon avalanche diode
monolithic integration
zero-change standard CMOS technology
url https://www.mdpi.com/2410-390X/3/2/33
work_keys_str_mv AT jinsoorhim monolithicallyintegratedsinglephotonavalanchediodeinazerochangestandardcmosprocessforlowcostandlowvoltagelidarapplication
AT xiaogezeng monolithicallyintegratedsinglephotonavalanchediodeinazerochangestandardcmosprocessforlowcostandlowvoltagelidarapplication
AT zhihonghuang monolithicallyintegratedsinglephotonavalanchediodeinazerochangestandardcmosprocessforlowcostandlowvoltagelidarapplication
AT sairahulchalamalasetti monolithicallyintegratedsinglephotonavalanchediodeinazerochangestandardcmosprocessforlowcostandlowvoltagelidarapplication
AT marcofiorentino monolithicallyintegratedsinglephotonavalanchediodeinazerochangestandardcmosprocessforlowcostandlowvoltagelidarapplication
AT raymondbeausoleil monolithicallyintegratedsinglephotonavalanchediodeinazerochangestandardcmosprocessforlowcostandlowvoltagelidarapplication
AT myungjaelee monolithicallyintegratedsinglephotonavalanchediodeinazerochangestandardcmosprocessforlowcostandlowvoltagelidarapplication
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