Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO<sub>2</sub> Buffer Layer

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO<sub>2</sub> Buffer Layer

We report the performance improvement of low-temperature coplanar indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs) with a maximum process temperature of 230 °C. We treated F plasma on the surface of an SiO<sub>2</sub> buffer layer before depositing the IGZO semiconductor by...

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Bibliographic Details
Main Authors: Ho-young Jeong, Seung-hee Nam, Kwon-shik Park, Soo-young Yoon, Chanju Park, Jin Jang
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Nanomaterials
Subjects:
low-temperature coplanar IGZO TFT
bias stability
In-F nanoparticles
Online Access:https://www.mdpi.com/2079-4991/10/6/1165

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