Ge distribution in Si0.9Ge0.1 alloy ingot grown from thin melt layer
We have studied experimentally and theoretically the possibility to obtain a uniform single crystal of SiGe alloy enriched at the Si side. The content of the second component in a crystal 15 mm in diameter and 40 mm in length grown by the modified floating zone technique from the charge of 79.8 at.%...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2016-12-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916300846 |