Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP
It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au—TiB2—Ge—Au—n—n+—n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment...
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Politehperiodika
2012-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2012/4_2012/pdf/07.zip |
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doaj-63b37624356a416b881910ee495438b62020-11-25T00:14:42ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182012-08-0143234Effect of annealing temperature on the value of contact resistance of ohmic contacts to InPNovitskyi S.V.It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au—TiB2—Ge—Au—n—n+—n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment were obtained at different annealing temperatures.http://www.tkea.com.ua/tkea/2012/4_2012/pdf/07.zipindium phosphideohmic contactdislocationthe specific contact resistance |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Novitskyi S.V. |
| spellingShingle |
Novitskyi S.V. Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP Tekhnologiya i Konstruirovanie v Elektronnoi Apparature indium phosphide ohmic contact dislocation the specific contact resistance |
| author_facet |
Novitskyi S.V. |
| author_sort |
Novitskyi S.V. |
| title |
Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP |
| title_short |
Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP |
| title_full |
Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP |
| title_fullStr |
Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP |
| title_full_unstemmed |
Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP |
| title_sort |
effect of annealing temperature on the value of contact resistance of ohmic contacts to inp |
| publisher |
Politehperiodika |
| series |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| issn |
2225-5818 |
| publishDate |
2012-08-01 |
| description |
It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au—TiB2—Ge—Au—n—n+—n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment were obtained at different annealing temperatures. |
| topic |
indium phosphide ohmic contact dislocation the specific contact resistance |
| url |
http://www.tkea.com.ua/tkea/2012/4_2012/pdf/07.zip |
| work_keys_str_mv |
AT novitskyisv effectofannealingtemperatureonthevalueofcontactresistanceofohmiccontactstoinp |
| _version_ |
1725388966663815168 |