Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP
It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au—TiB2—Ge—Au—n—n+—n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2012-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2012/4_2012/pdf/07.zip |