Ge-Core/a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection
Although terahertz technology has demonstrated strong potential for various applications, detectors operating in the terahertz region are yet to be fully established. Numerous designs have been proposed for sensitive terahertz detection, with a nanowire-based field-effect transistor (FET) being one...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-05-01
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| Series: | Photonics |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2304-6732/5/2/13 |