Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO2) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been...

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Main Authors:	Di Dawei, Perez-Wurfl Ivan, Gentle Angus, Kim Dong-Ho, Hao Xiaojing, Shi Lei, Conibeer Gavin, Green Martin
Format:	Article
Language:	English
Published:	SpringerOpen 2010-01-01
Series:	Nanoscale Research Letters
Subjects:	Silicon Quantum dots Solar cells Third generation Electrical characterisation
Online Access:	http://dx.doi.org/10.1007/s11671-010-9707-x

id	doaj-63559085924e4b288b10760dbeb82e35
record_format	Article
spelling	doaj-63559085924e4b288b10760dbeb82e352020-11-25T02:31:02ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151117621767Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar CellsDi DaweiPerez-Wurfl IvanGentle AngusKim Dong-HoHao XiaojingShi LeiConibeer GavinGreen Martin<p>Abstract</p> <p>As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub>2</sub>) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub>3</sub>PO<sub>4</sub>) etching, nitrogen (N<sub>2</sub>) gas anneal and forming gas (Ar: H<sub>2</sub>) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it>I</it>–<it>V</it>, light <it>I</it>–<it>V</it> and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p> http://dx.doi.org/10.1007/s11671-010-9707-xSiliconQuantum dotsSolar cellsThird generationElectrical characterisation
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Di Dawei Perez-Wurfl Ivan Gentle Angus Kim Dong-Ho Hao Xiaojing Shi Lei Conibeer Gavin Green Martin
spellingShingle	Di Dawei Perez-Wurfl Ivan Gentle Angus Kim Dong-Ho Hao Xiaojing Shi Lei Conibeer Gavin Green Martin Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells Nanoscale Research Letters Silicon Quantum dots Solar cells Third generation Electrical characterisation
author_facet	Di Dawei Perez-Wurfl Ivan Gentle Angus Kim Dong-Ho Hao Xiaojing Shi Lei Conibeer Gavin Green Martin
author_sort	Di Dawei
title	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
title_short	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
title_full	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
title_fullStr	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
title_full_unstemmed	Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells
title_sort	impacts of post-metallisation processes on the electrical and photovoltaic properties of si quantum dot solar cells
publisher	SpringerOpen
series	Nanoscale Research Letters
issn	1931-7573 1556-276X
publishDate	2010-01-01
description	<p>Abstract</p> <p>As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO<sub>2</sub>) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H<sub>3</sub>PO<sub>4</sub>) etching, nitrogen (N<sub>2</sub>) gas anneal and forming gas (Ar: H<sub>2</sub>) anneal on the cells’ electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark <it>I</it>–<it>V</it>, light <it>I</it>–<it>V</it> and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.</p>
topic	Silicon Quantum dots Solar cells Third generation Electrical characterisation
url	http://dx.doi.org/10.1007/s11671-010-9707-x
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Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

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