The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications

Zinc oxide (ZnO) nanostructures possess several interesting characteristics, which make them ideal sensing materials in biological and industrial applications. In this study, we investigate the pH and ion-concentration sensing properties of an electrolyte–insulator–semiconductor (EIS) device based o...

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Main Authors: Chun Fu Lin, Chyuan Haur Kao, Chan Yu Lin, Yi Wen Liu, Chun Hsiang Wang
Format: Article
Language:English
Published: Elsevier 2020-03-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379719329948
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spelling doaj-6318bec43b304cdd98d1ae2d501e8ffc2020-11-25T03:34:22ZengElsevierResults in Physics2211-37972020-03-0116102976The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applicationsChun Fu Lin0Chyuan Haur Kao1Chan Yu Lin2Yi Wen Liu3Chun Hsiang Wang4Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROCDepartment of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC; Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, No.5, Fuxing St., Guishan Dist., Taoyuan City 333, Taiwan, ROC; Department of Electronic Engineering, Ming Chi University of Technology, 284 Gungjuan Rd., Taishan Dist., New Taipei City 24301, Taiwan, ROC; Corresponding author at: Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC.Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, No.5, Fuxing St., Guishan Dist., Taoyuan City 333, Taiwan, ROCDepartment of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROCDepartment of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROCZinc oxide (ZnO) nanostructures possess several interesting characteristics, which make them ideal sensing materials in biological and industrial applications. In this study, we investigate the pH and ion-concentration sensing properties of an electrolyte–insulator–semiconductor (EIS) device based on Mg-doped ZnO. EIS devices are highly sensitive to changes in the nature of the electrolyte, making them ideal for a wide range of applications. These devices, deposited by reactive RF co-sputtering on a silicon substrate, require rapid thermal annealing in an oxygen atmosphere for optimal sensing activity. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX) analyses were performed to correlate the structural properties with the sensing performance. The highest sensitivity to pH and ion concentrations, lowest hysteresis, and lowest drift rate were observed on a Mg-doped sample annealed at 700 °C. EIS devices based on Mg-doped ZnO can be used as suitable sensors for future biomedical applications.http://www.sciencedirect.com/science/article/pii/S2211379719329948Electrolyte–insulator–semiconductor (EIS) deviceMg-doped ZnOSensing membraneRadio frequency co-sputteringGlucose
collection DOAJ
language English
format Article
sources DOAJ
author Chun Fu Lin
Chyuan Haur Kao
Chan Yu Lin
Yi Wen Liu
Chun Hsiang Wang
spellingShingle Chun Fu Lin
Chyuan Haur Kao
Chan Yu Lin
Yi Wen Liu
Chun Hsiang Wang
The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications
Results in Physics
Electrolyte–insulator–semiconductor (EIS) device
Mg-doped ZnO
Sensing membrane
Radio frequency co-sputtering
Glucose
author_facet Chun Fu Lin
Chyuan Haur Kao
Chan Yu Lin
Yi Wen Liu
Chun Hsiang Wang
author_sort Chun Fu Lin
title The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications
title_short The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications
title_full The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications
title_fullStr The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications
title_full_unstemmed The electrical and physical characteristics of Mg-doped ZnO sensing membrane in EIS (electrolyte–insulator–semiconductor) for glucose sensing applications
title_sort electrical and physical characteristics of mg-doped zno sensing membrane in eis (electrolyte–insulator–semiconductor) for glucose sensing applications
publisher Elsevier
series Results in Physics
issn 2211-3797
publishDate 2020-03-01
description Zinc oxide (ZnO) nanostructures possess several interesting characteristics, which make them ideal sensing materials in biological and industrial applications. In this study, we investigate the pH and ion-concentration sensing properties of an electrolyte–insulator–semiconductor (EIS) device based on Mg-doped ZnO. EIS devices are highly sensitive to changes in the nature of the electrolyte, making them ideal for a wide range of applications. These devices, deposited by reactive RF co-sputtering on a silicon substrate, require rapid thermal annealing in an oxygen atmosphere for optimal sensing activity. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX) analyses were performed to correlate the structural properties with the sensing performance. The highest sensitivity to pH and ion concentrations, lowest hysteresis, and lowest drift rate were observed on a Mg-doped sample annealed at 700 °C. EIS devices based on Mg-doped ZnO can be used as suitable sensors for future biomedical applications.
topic Electrolyte–insulator–semiconductor (EIS) device
Mg-doped ZnO
Sensing membrane
Radio frequency co-sputtering
Glucose
url http://www.sciencedirect.com/science/article/pii/S2211379719329948
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