Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO<sub>2</sub>

Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO<sub>2</sub>

In this work, we improved the performance of germanium (Ge) channel Charge Trapping MemTransistors (CTMTs) as synaptic device by using Ti-doped HfO<sub>2</sub> as charge trapping layer (CTL). We manipulated the amount of Ti dopant within the HfO<sub>2</sub> CTL to perform the...

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Bibliographic Details
Main Authors: Yu-Che Chou, Wan-Hsuan Chung, Chien-Wei Tsai, Chin-Ya Yi, Chao-Hsin Chien
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Germanium
dielectric materials
neural network hardware
analog memories
artificial intelligence
MOSFETs
Online Access:https://ieeexplore.ieee.org/document/9296335/

Internet

https://ieeexplore.ieee.org/document/9296335/

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