TSV-Defect Modeling, Detection and Diagnosis Based on 3-D Full Wave Simulation and Parametric Measurement

• Main Authors: Xu Fang, Yang Yu, Kangkang Xu, Xiyuan Peng
• Format: Article
• Language: English
• Published: IEEE 2018-01-01
• Series: IEEE Access
• Subjects: 3D-ICs; TSV; defect modeling; test and diagnosis; switched capacitor
• Online Access: https://ieeexplore.ieee.org/document/8525271/

In this paper, we present a TSV low-bandwidth equivalent lumped circuit model of common TSV defects as analyzed using a high-frequency structure simulator 3-D full wave simulation. By using the proposed model, the physical parameters of TSV are related to its electrical parameters, providing the possibility for defect diagnosis. The simulation results show that only some of the common defects tend to vary the electrical parameters of TSVs. Based on these conclusions, we present a novel TSV-defect detection and diagnosis method using switched-capacitor circuits. The proposed method can effectively detect significant void defects, pinhole defects, and missing micro-bump defects using parametric measurement and has been verified through HSPICE simulation.