Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (&gt;10 cm<sup>2</sup>/Vs) and high current O...

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Bibliographic Details
Main Authors: Christophe Avis, YounGoo Kim, Jin Jang
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Materials
Subjects:
tin oxide
thin-film transistor
hafnium oxide
solution process
amorphous oxide semiconductor
Online Access:https://www.mdpi.com/1996-1944/12/20/3341

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