High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate
In this letter, we successfully demonstrated a AlGaN/GaN high-electron mobility transistor on silicon substrate with high product of maximum oscillation frequency (f<sub>max</sub>) and gate length (L<sub>G</sub>) by reducing the gate resistance (R<sub>g</sub>) usi...
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9066980/ |
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doaj-624d3ed5beae4359b5d35e1fd2047df42021-03-29T18:51:30ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01848148410.1109/JEDS.2020.29875979066980High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular GateLi-Cheng Chang0Kai-Chieh Hsu1Yung-Ting Ho2Wei-Cheng Tzeng3Yu-Li Ho4Chao-Hsin Wu5Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei, TaiwanIn this letter, we successfully demonstrated a AlGaN/GaN high-electron mobility transistor on silicon substrate with high product of maximum oscillation frequency (f<sub>max</sub>) and gate length (L<sub>G</sub>) by reducing the gate resistance (R<sub>g</sub>) using a thick, high aspect ratio rectangular gate (R-gate) structure with an L<sub>G</sub> of 265 nm and thickness of 315 nm which was fabricated using a thick polymethyl methacrylate lift-off process. The maximum drain current is over 1 A/mm, and the peak transconductance is 291 mS/mm. The values of cutoff frequency and f<sub>max</sub> are 43.7 GHz and 126.5 GHz at a drain voltage (V<sub>d</sub>) of 12 V, respectively. R<sub>g</sub> is extracted through the small-signal model, and the value is given as 0.21 Ω-mm which is comparable to devices with the T-gate structure. This low R<sub>g</sub> results in a high f<sub>max</sub> and high f<sub>max</sub> × L<sub>G</sub> product of 33.52 GHz-μm, comparable to previously reported GaN-on-Si transistors for both R-gate and T-gate structures.https://ieeexplore.ieee.org/document/9066980/AlGaN/GaNhigh-electron mobility transistor (HEMT)silicon substratepower-gain cutoff frequency (fₘₐₓ)rectangular gatefₘₐₓ × LG |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Li-Cheng Chang Kai-Chieh Hsu Yung-Ting Ho Wei-Cheng Tzeng Yu-Li Ho Chao-Hsin Wu |
| spellingShingle |
Li-Cheng Chang Kai-Chieh Hsu Yung-Ting Ho Wei-Cheng Tzeng Yu-Li Ho Chao-Hsin Wu High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate IEEE Journal of the Electron Devices Society AlGaN/GaN high-electron mobility transistor (HEMT) silicon substrate power-gain cutoff frequency (fₘₐₓ) rectangular gate fₘₐₓ × LG |
| author_facet |
Li-Cheng Chang Kai-Chieh Hsu Yung-Ting Ho Wei-Cheng Tzeng Yu-Li Ho Chao-Hsin Wu |
| author_sort |
Li-Cheng Chang |
| title |
High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate |
| title_short |
High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate |
| title_full |
High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate |
| title_fullStr |
High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate |
| title_full_unstemmed |
High <italic>f<sub>max</sub></italic> × <italic>L<sub>G</sub></italic> Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate |
| title_sort |
high <italic>f<sub>max</sub></italic> × <italic>l<sub>g</sub></italic> product of algan/gan hemts on silicon with thick rectangular gate |
| publisher |
IEEE |
| series |
IEEE Journal of the Electron Devices Society |
| issn |
2168-6734 |
| publishDate |
2020-01-01 |
| description |
In this letter, we successfully demonstrated a AlGaN/GaN high-electron mobility transistor on silicon substrate with high product of maximum oscillation frequency (f<sub>max</sub>) and gate length (L<sub>G</sub>) by reducing the gate resistance (R<sub>g</sub>) using a thick, high aspect ratio rectangular gate (R-gate) structure with an L<sub>G</sub> of 265 nm and thickness of 315 nm which was fabricated using a thick polymethyl methacrylate lift-off process. The maximum drain current is over 1 A/mm, and the peak transconductance is 291 mS/mm. The values of cutoff frequency and f<sub>max</sub> are 43.7 GHz and 126.5 GHz at a drain voltage (V<sub>d</sub>) of 12 V, respectively. R<sub>g</sub> is extracted through the small-signal model, and the value is given as 0.21 Ω-mm which is comparable to devices with the T-gate structure. This low R<sub>g</sub> results in a high f<sub>max</sub> and high f<sub>max</sub> × L<sub>G</sub> product of 33.52 GHz-μm, comparable to previously reported GaN-on-Si transistors for both R-gate and T-gate structures. |
| topic |
AlGaN/GaN high-electron mobility transistor (HEMT) silicon substrate power-gain cutoff frequency (fₘₐₓ) rectangular gate fₘₐₓ × LG |
| url |
https://ieeexplore.ieee.org/document/9066980/ |
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