CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION

CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION

The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat p–n-junc...

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Bibliographic Details
Main Authors: N. A. Poklonski, A. I. Kovalev, N. I. Gorbachuk, S. V. Shpakovski
Format: Article
Language:English
Published: Belarusian National Technical University 2018-06-01
Series:Pribory i Metody Izmerenij
Subjects:
silicon
p–n-junction
δ-layer of point defects
current-voltage characteristic
capacity-voltage characteristic
Online Access:https://pimi.bntu.by/jour/article/view/375

Internet

https://pimi.bntu.by/jour/article/view/375

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