Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, includ...

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Bibliographic Details
Main Authors: Konstantinos Pantzas, Ahmad Itawi, Isabelle Sagnes, Gilles Patriarche, Eric Le Bourhis, Anatole Lupu, Henri Benisty, Anne Talneau
Format: Article
Language:English
Published: MDPI AG 2015-10-01
Series:Photonics
Subjects:
silicon photonics hybrid integration
III-V materials
wafer bonding
oxide-free bonding
silicon waveguide nanopatterning
telecom optical functions
Online Access:http://www.mdpi.com/2304-6732/2/4/1054
Description
Summary:Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.
ISSN:2304-6732

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