ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001) as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The...

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Main Authors: Martin Mikulics, Ondřej Jankovský, David Sedmidubský, Zdeněk Sofer, Ladislav Nádherný
Format: Article
Language:English
Published: University of Chemistry and Technology, Prague 2012-07-01
Series:Ceramics-Silikáty
Subjects:
Online Access:http://www.ceramics-silikaty.cz/2012/pdf/2012_02_117.pdf
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spelling doaj-5ffc5cc2f39f47dbb5066b19448584b02020-11-24T23:06:39ZengUniversity of Chemistry and Technology, PragueCeramics-Silikáty0862-54681804-58472012-07-01562117121ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSORMartin MikulicsOndřej JankovskýDavid SedmidubskýZdeněk SoferLadislav NádhernýPresented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001) as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS) value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.http://www.ceramics-silikaty.cz/2012/pdf/2012_02_117.pdfZinc oxideThin filmsSpray-pyrolysisZinc acetyl-acetonate
collection DOAJ
language English
format Article
sources DOAJ
author Martin Mikulics
Ondřej Jankovský
David Sedmidubský
Zdeněk Sofer
Ladislav Nádherný
spellingShingle Martin Mikulics
Ondřej Jankovský
David Sedmidubský
Zdeněk Sofer
Ladislav Nádherný
ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR
Ceramics-Silikáty
Zinc oxide
Thin films
Spray-pyrolysis
Zinc acetyl-acetonate
author_facet Martin Mikulics
Ondřej Jankovský
David Sedmidubský
Zdeněk Sofer
Ladislav Nádherný
author_sort Martin Mikulics
title ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR
title_short ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR
title_full ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR
title_fullStr ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR
title_full_unstemmed ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR
title_sort zno thin films prepared by spray-pyrolysis technique from organo-metallic precursor
publisher University of Chemistry and Technology, Prague
series Ceramics-Silikáty
issn 0862-5468
1804-5847
publishDate 2012-07-01
description Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001) as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS) value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.
topic Zinc oxide
Thin films
Spray-pyrolysis
Zinc acetyl-acetonate
url http://www.ceramics-silikaty.cz/2012/pdf/2012_02_117.pdf
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