Análisis del método de TSC para la obtención de la DOS en materiales semiconductores.
In this work, a detailed study of thermally stimulated con- ductivity technique (TSC) is presented. Density of states (DOS) was obtained from the experimental measurements on boron-doped microcrystalline silicon samples [μc-Si:H (B)] and compared with results obtained by the modula- ted photoconduct...
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Universidad Nacional de Colombia
2006-01-01
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| Series: | Momento |
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| Online Access: | https://revistas.unal.edu.co/index.php/momento/article/view/40599 |
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doaj-5fcfd112f66644a696dd404e2258bbf62020-11-24T21:14:42ZengUniversidad Nacional de ColombiaMomento0121-44702500-80132006-01-01032152736424Análisis del método de TSC para la obtención de la DOS en materiales semiconductores.A. Dussan0Departamento de Física, Universidad Nacional de Colombia, Bogotá.In this work, a detailed study of thermally stimulated con- ductivity technique (TSC) is presented. Density of states (DOS) was obtained from the experimental measurements on boron-doped microcrystalline silicon samples [μc-Si:H (B)] and compared with results obtained by the modula- ted photoconductivity methods. To explain the poor agree- ment between the DOS obtained from the TSC and the other methods, it is shown by means of numerical simula- tions that the DOS is very sensitive to experimental errors introduced in the calculation of the μnτn product (mobility of electron × lifetime of the electron).https://revistas.unal.edu.co/index.php/momento/article/view/40599Semiconductorespelículas delgadasDOS. |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
A. Dussan |
| spellingShingle |
A. Dussan Análisis del método de TSC para la obtención de la DOS en materiales semiconductores. Momento Semiconductores películas delgadas DOS. |
| author_facet |
A. Dussan |
| author_sort |
A. Dussan |
| title |
Análisis del método de TSC para la obtención de la DOS en materiales semiconductores. |
| title_short |
Análisis del método de TSC para la obtención de la DOS en materiales semiconductores. |
| title_full |
Análisis del método de TSC para la obtención de la DOS en materiales semiconductores. |
| title_fullStr |
Análisis del método de TSC para la obtención de la DOS en materiales semiconductores. |
| title_full_unstemmed |
Análisis del método de TSC para la obtención de la DOS en materiales semiconductores. |
| title_sort |
análisis del método de tsc para la obtención de la dos en materiales semiconductores. |
| publisher |
Universidad Nacional de Colombia |
| series |
Momento |
| issn |
0121-4470 2500-8013 |
| publishDate |
2006-01-01 |
| description |
In this work, a detailed study of thermally stimulated con- ductivity technique (TSC) is presented. Density of states (DOS) was obtained from the experimental measurements on boron-doped microcrystalline silicon samples [μc-Si:H (B)] and compared with results obtained by the modula- ted photoconductivity methods. To explain the poor agree- ment between the DOS obtained from the TSC and the other methods, it is shown by means of numerical simula- tions that the DOS is very sensitive to experimental errors introduced in the calculation of the μnτn product (mobility of electron × lifetime of the electron). |
| topic |
Semiconductores películas delgadas DOS. |
| url |
https://revistas.unal.edu.co/index.php/momento/article/view/40599 |
| work_keys_str_mv |
AT adussan analisisdelmetododetscparalaobtenciondeladosenmaterialessemiconductores |
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1716746368348848128 |