Análisis del método de TSC para la obtención de la DOS en materiales semiconductores.
In this work, a detailed study of thermally stimulated con- ductivity technique (TSC) is presented. Density of states (DOS) was obtained from the experimental measurements on boron-doped microcrystalline silicon samples [μc-Si:H (B)] and compared with results obtained by the modula- ted photoconduct...
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| Format: | Article |
| Language: | English |
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Universidad Nacional de Colombia
2006-01-01
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| Series: | Momento |
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| Online Access: | https://revistas.unal.edu.co/index.php/momento/article/view/40599 |
| Summary: | In this work, a detailed study of thermally stimulated con- ductivity technique (TSC) is presented. Density of states (DOS) was obtained from the experimental measurements on boron-doped microcrystalline silicon samples [μc-Si:H (B)] and compared with results obtained by the modula- ted photoconductivity methods. To explain the poor agree- ment between the DOS obtained from the TSC and the other methods, it is shown by means of numerical simula- tions that the DOS is very sensitive to experimental errors introduced in the calculation of the μnτn product (mobility of electron × lifetime of the electron). |
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| ISSN: | 0121-4470 2500-8013 |