Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements

We report on material improvements to non-filamentary RRAM devices based on Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance...

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Bibliographic Details
Main Authors: Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M. Shelby, Geoffrey W. Burr, Hyunsang Hwang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Resistive RAM
neural network hardware
nonvolatile memory
Online Access:https://ieeexplore.ieee.org/document/8168326/

Internet

https://ieeexplore.ieee.org/document/8168326/

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