Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor

The purpose of this study was to determine the feasibility of using an electrical low pressure impactor (ELPI) for analyzing residual particles in a Si epitaxial growth process chamber and establish an application technique. Prior to experimental measurements, some preliminary works were conducted,...

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Main Authors: Seungjae Lee, Dongbin Kim, Yujin Cho, Eunmi Kim, Pengzhan Liu, Dong-Bin Kwak, Seungho Keum, Hongkang Lim, Taesung Kim
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/11/16/7680
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spelling doaj-5f353aafa1414cb2a5707c06507d65b82021-08-26T13:30:59ZengMDPI AGApplied Sciences2076-34172021-08-01117680768010.3390/app11167680Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth ReactorSeungjae Lee0Dongbin Kim1Yujin Cho2Eunmi Kim3Pengzhan Liu4Dong-Bin Kwak5Seungho Keum6Hongkang Lim7Taesung Kim8School of Mechanical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, KoreaParticle Technology Laboratory, Mechanical Engineering, University of Minnesota, 111 Church St., S.E., Minneapolis, MN 55455, USAConvergence Research Center for Energy and Environmental Sciences, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, KoreaSchool of Mechanical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, KoreaSchool of Mechanical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, KoreaParticle Technology Laboratory, Mechanical Engineering, University of Minnesota, 111 Church St., S.E., Minneapolis, MN 55455, USASK Siltron Co. Ltd., 53 Imsu-ro, Gyeongsangbuk-do, Gumi 39386, KoreaSK Siltron Co. Ltd., 53 Imsu-ro, Gyeongsangbuk-do, Gumi 39386, KoreaSchool of Mechanical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, KoreaThe purpose of this study was to determine the feasibility of using an electrical low pressure impactor (ELPI) for analyzing residual particles in a Si epitaxial growth process chamber and establish an application technique. Prior to experimental measurements, some preliminary works were conducted, including an inlet improvement of a cascade impactor, vacuum fitting fastening and flow rate adjustment, and a vacuum leak test. After that, residual particles in the process chamber were measured during N<sub>2</sub> gas purge using an ELPI due to its advantages including the real-time measurement of particles and the ability to separate and collect particles by their diameters. In addition, ELPI could be used to obtain particle size distribution and see the distribution trend for both number and mass concentration. The results of the real-time analysis of the total particle count revealed that the concentration at the endpoint compared to that at the beginning of the measurement by decreased 36.9%. Scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM–EDS) analysis of collected particles was performed using two types of substrates: Al foil and a Si wafer. The results showed that most particles were Si particles, while few particles had Si and Cl components. ELPI has the clear advantages of real-time particle concentration measurement and simultaneous collection. Thus, we believe that it can be more actively used for particle measurement and analysis in the semiconductor industry, which has many critical micro/nanoparticle issues.https://www.mdpi.com/2076-3417/11/16/7680semiconductor processprocess particleepitaxial growthelectrical low pressure impactor (ELPI)particle size distribution (PSD)
collection DOAJ
language English
format Article
sources DOAJ
author Seungjae Lee
Dongbin Kim
Yujin Cho
Eunmi Kim
Pengzhan Liu
Dong-Bin Kwak
Seungho Keum
Hongkang Lim
Taesung Kim
spellingShingle Seungjae Lee
Dongbin Kim
Yujin Cho
Eunmi Kim
Pengzhan Liu
Dong-Bin Kwak
Seungho Keum
Hongkang Lim
Taesung Kim
Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor
Applied Sciences
semiconductor process
process particle
epitaxial growth
electrical low pressure impactor (ELPI)
particle size distribution (PSD)
author_facet Seungjae Lee
Dongbin Kim
Yujin Cho
Eunmi Kim
Pengzhan Liu
Dong-Bin Kwak
Seungho Keum
Hongkang Lim
Taesung Kim
author_sort Seungjae Lee
title Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor
title_short Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor
title_full Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor
title_fullStr Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor
title_full_unstemmed Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor
title_sort application of an electrical low pressure impactor (elpi) for residual particle measurement in an epitaxial growth reactor
publisher MDPI AG
series Applied Sciences
issn 2076-3417
publishDate 2021-08-01
description The purpose of this study was to determine the feasibility of using an electrical low pressure impactor (ELPI) for analyzing residual particles in a Si epitaxial growth process chamber and establish an application technique. Prior to experimental measurements, some preliminary works were conducted, including an inlet improvement of a cascade impactor, vacuum fitting fastening and flow rate adjustment, and a vacuum leak test. After that, residual particles in the process chamber were measured during N<sub>2</sub> gas purge using an ELPI due to its advantages including the real-time measurement of particles and the ability to separate and collect particles by their diameters. In addition, ELPI could be used to obtain particle size distribution and see the distribution trend for both number and mass concentration. The results of the real-time analysis of the total particle count revealed that the concentration at the endpoint compared to that at the beginning of the measurement by decreased 36.9%. Scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM–EDS) analysis of collected particles was performed using two types of substrates: Al foil and a Si wafer. The results showed that most particles were Si particles, while few particles had Si and Cl components. ELPI has the clear advantages of real-time particle concentration measurement and simultaneous collection. Thus, we believe that it can be more actively used for particle measurement and analysis in the semiconductor industry, which has many critical micro/nanoparticle issues.
topic semiconductor process
process particle
epitaxial growth
electrical low pressure impactor (ELPI)
particle size distribution (PSD)
url https://www.mdpi.com/2076-3417/11/16/7680
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