Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers
In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition by horizontal hot wall chemical vapor deposition (HWCVD) with a standard chemistry of silane-propane-hydrogen, which focuses on the effects of growth pressure on morphology, basal plane dislocations (...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2016-08-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/9/9/743 |