Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition by horizontal hot wall chemical vapor deposition (HWCVD) with a standard chemistry of silane-propane-hydrogen, which focuses on the effects of growth pressure on morphology, basal plane dislocations (...

Full description

Bibliographic Details
Main Authors: Jichao Hu, Renxu Jia, Bin Xin, Bo Peng, Yuehu Wang, Yuming Zhang
Format: Article
Language:English
Published: MDPI AG 2016-08-01
Series:Materials
Subjects:
low pressure growth
4H-SiC homoepitaxy
surface diffusion length
minimization mode of surface energy
Online Access:http://www.mdpi.com/1996-1944/9/9/743

Internet

http://www.mdpi.com/1996-1944/9/9/743

Similar Items