Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique

Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique

A hydrogen atom, characterized by one unpaired electron and the smallest atomic radius, underlies the operations of various solid-state devices such as transistors, capacitors, solar cells, etc. Given its specific character as donor impurity in oxides, hydrogen may also facilitate efficient electron...

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Main Authors: T. Yajima, G. Oike, S. Yamaguchi, S. Miyoshi, T. Nishimura, A. Toriumi
Format: Article
Language:English
Published: AIP Publishing LLC 2018-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5055302
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spelling doaj-5ef1ab0599004c97948d88cb5fbea4202020-11-24T21:59:09ZengAIP Publishing LLCAIP Advances2158-32262018-11-01811115133115133-710.1063/1.5055302108811ADVHydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping techniqueT. Yajima0G. Oike1S. Yamaguchi2S. Miyoshi3T. Nishimura4A. Toriumi5Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, JapanDepartment of Materials Engineering, The University of Tokyo, Tokyo 113-8656, JapanDepartment of Materials Engineering, The University of Tokyo, Tokyo 113-8656, JapanDepartment of Materials Engineering, The University of Tokyo, Tokyo 113-8656, JapanDepartment of Materials Engineering, The University of Tokyo, Tokyo 113-8656, JapanDepartment of Materials Engineering, The University of Tokyo, Tokyo 113-8656, JapanA hydrogen atom, characterized by one unpaired electron and the smallest atomic radius, underlies the operations of various solid-state devices such as transistors, capacitors, solar cells, etc. Given its specific character as donor impurity in oxides, hydrogen may also facilitate efficient electron doping in a wide range of oxide devices. Here, we demonstrate room-temperature electrochemical hydrogenation of an archetypical oxide semiconductor (TiO2) thin film to achieve a 3D-compatible electron doping technique. The hydrogenated region can be precisely defined by photolithography without the influence of polycrystalline grain boundaries. Besides, secondary ion mass spectroscopy with deuterium isotope reveals considerable amount of hydrogen condenses around the TiO2 bottom interface indicating the critical influence of the interface on hydrogen stability. This hydrogen shows excellent stability in contrast to its high diffusivity in bulk TiO2, enabling robust electron doping for oxide thin film devices as well as suggesting stable interface hydrogen reservoir for electrochemical phenomena.http://dx.doi.org/10.1063/1.5055302
collection DOAJ
language English
format Article
sources DOAJ
author T. Yajima
G. Oike
S. Yamaguchi
S. Miyoshi
T. Nishimura
A. Toriumi
spellingShingle T. Yajima
G. Oike
S. Yamaguchi
S. Miyoshi
T. Nishimura
A. Toriumi
Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
AIP Advances
author_facet T. Yajima
G. Oike
S. Yamaguchi
S. Miyoshi
T. Nishimura
A. Toriumi
author_sort T. Yajima
title Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
title_short Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
title_full Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
title_fullStr Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
title_full_unstemmed Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
title_sort hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3d-compatible electron doping technique
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-11-01
description A hydrogen atom, characterized by one unpaired electron and the smallest atomic radius, underlies the operations of various solid-state devices such as transistors, capacitors, solar cells, etc. Given its specific character as donor impurity in oxides, hydrogen may also facilitate efficient electron doping in a wide range of oxide devices. Here, we demonstrate room-temperature electrochemical hydrogenation of an archetypical oxide semiconductor (TiO2) thin film to achieve a 3D-compatible electron doping technique. The hydrogenated region can be precisely defined by photolithography without the influence of polycrystalline grain boundaries. Besides, secondary ion mass spectroscopy with deuterium isotope reveals considerable amount of hydrogen condenses around the TiO2 bottom interface indicating the critical influence of the interface on hydrogen stability. This hydrogen shows excellent stability in contrast to its high diffusivity in bulk TiO2, enabling robust electron doping for oxide thin film devices as well as suggesting stable interface hydrogen reservoir for electrochemical phenomena.
url http://dx.doi.org/10.1063/1.5055302
work_keys_str_mv AT tyajima hydrogenationofthewidegapoxidesemiconductorasaroomtemperatureand3dcompatibleelectrondopingtechnique
AT goike hydrogenationofthewidegapoxidesemiconductorasaroomtemperatureand3dcompatibleelectrondopingtechnique
AT syamaguchi hydrogenationofthewidegapoxidesemiconductorasaroomtemperatureand3dcompatibleelectrondopingtechnique
AT smiyoshi hydrogenationofthewidegapoxidesemiconductorasaroomtemperatureand3dcompatibleelectrondopingtechnique
AT tnishimura hydrogenationofthewidegapoxidesemiconductorasaroomtemperatureand3dcompatibleelectrondopingtechnique
AT atoriumi hydrogenationofthewidegapoxidesemiconductorasaroomtemperatureand3dcompatibleelectrondopingtechnique
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