A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension

A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension

This paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extensi...

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Main Authors: Shichang Chen, Weiwei Wang, Kuiwen Xu, Gaofeng Wang
Format: Article
Language:English
Published: Hindawi-Wiley 2018-01-01
Series:Wireless Communications and Mobile Computing
Online Access:http://dx.doi.org/10.1155/2018/8418165
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spelling doaj-5eb34edb294b4a28b568c13e5d7f9e742020-11-25T01:01:43ZengHindawi-WileyWireless Communications and Mobile Computing1530-86691530-86772018-01-01201810.1155/2018/84181658418165A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range ExtensionShichang Chen0Weiwei Wang1Kuiwen Xu2Gaofeng Wang3The Key Lab of RF Circuits and Systems of the Ministry of Education of China, Microelectronic CAD Center, Hangzhou Dianzi University, Zhejiang, ChinaThe Key Lab of RF Circuits and Systems of the Ministry of Education of China, Microelectronic CAD Center, Hangzhou Dianzi University, Zhejiang, ChinaThe Key Lab of RF Circuits and Systems of the Ministry of Education of China, Microelectronic CAD Center, Hangzhou Dianzi University, Zhejiang, ChinaThe Key Lab of RF Circuits and Systems of the Ministry of Education of China, Microelectronic CAD Center, Hangzhou Dianzi University, Zhejiang, ChinaThis paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extension mechanism of the proposed configuration is comprehensively analyzed. A three-device Doherty power amplifier is implemented for demonstration based on Cree’s 10 W HEMTs. Measurements show that at least 41% drain efficiency is maintained from 2.0 GHz to 2.6 GHz at 8 dB back-off range. In the same operating band, saturation power is larger than 43.6 dBm and drain efficiency is higher than 53%.http://dx.doi.org/10.1155/2018/8418165
collection DOAJ
language English
format Article
sources DOAJ
author Shichang Chen
Weiwei Wang
Kuiwen Xu
Gaofeng Wang
spellingShingle Shichang Chen
Weiwei Wang
Kuiwen Xu
Gaofeng Wang
A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension
Wireless Communications and Mobile Computing
author_facet Shichang Chen
Weiwei Wang
Kuiwen Xu
Gaofeng Wang
author_sort Shichang Chen
title A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension
title_short A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension
title_full A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension
title_fullStr A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension
title_full_unstemmed A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension
title_sort reactance compensated three-device doherty power amplifier for bandwidth and back-off range extension
publisher Hindawi-Wiley
series Wireless Communications and Mobile Computing
issn 1530-8669
1530-8677
publishDate 2018-01-01
description This paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extension mechanism of the proposed configuration is comprehensively analyzed. A three-device Doherty power amplifier is implemented for demonstration based on Cree’s 10 W HEMTs. Measurements show that at least 41% drain efficiency is maintained from 2.0 GHz to 2.6 GHz at 8 dB back-off range. In the same operating band, saturation power is larger than 43.6 dBm and drain efficiency is higher than 53%.
url http://dx.doi.org/10.1155/2018/8418165
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