Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field

Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field

Three-dimensional numerical simulations were conducted for the Top-Seeded Solution Growth (TSSG) process of silicon carbide (SiC) crystals. We investigated the influence of coils frequency and peak current, and an applied rotating magnetic field (RMF) on the melt flow developing in this system. Nume...

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Bibliographic Details
Main Authors: Lei Wang, Yuto Takehara, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, Sadik Dost
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Crystals
Subjects:
sic crystal growth
tssg method
flow control
Online Access:https://www.mdpi.com/2073-4352/10/2/111

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