Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field
Three-dimensional numerical simulations were conducted for the Top-Seeded Solution Growth (TSSG) process of silicon carbide (SiC) crystals. We investigated the influence of coils frequency and peak current, and an applied rotating magnetic field (RMF) on the melt flow developing in this system. Nume...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-02-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/10/2/111 |