Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here, the authors theoretically demonstrate the im...

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Main Authors: Jasper Bizindavyi, Anne S. Verhulst, Bart Sorée, William G. Vandenberghe
Format: Article
Language:English
Published: Nature Publishing Group 2021-04-01
Series:Communications Physics
Online Access:https://doi.org/10.1038/s42005-021-00583-7
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spelling doaj-5e1bcda7f5bf4432b6d182bb7babf59f2021-05-02T11:22:22ZengNature Publishing GroupCommunications Physics2399-36502021-04-014111010.1038/s42005-021-00583-7Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulationJasper Bizindavyi0Anne S. Verhulst1Bart Sorée2William G. Vandenberghe3imecimecimecDepartment of Materials Science and Engineering, The University of Texas at DallasThe ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here, the authors theoretically demonstrate the importance of utilizing the correct thermodynamic potential and investigate the impact of free charge accumulation on the equilibrium performance of ferroelectric-based systems.https://doi.org/10.1038/s42005-021-00583-7
collection DOAJ
language English
format Article
sources DOAJ
author Jasper Bizindavyi
Anne S. Verhulst
Bart Sorée
William G. Vandenberghe
spellingShingle Jasper Bizindavyi
Anne S. Verhulst
Bart Sorée
William G. Vandenberghe
Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
Communications Physics
author_facet Jasper Bizindavyi
Anne S. Verhulst
Bart Sorée
William G. Vandenberghe
author_sort Jasper Bizindavyi
title Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_short Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_full Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_fullStr Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_full_unstemmed Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_sort thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
publisher Nature Publishing Group
series Communications Physics
issn 2399-3650
publishDate 2021-04-01
description The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here, the authors theoretically demonstrate the importance of utilizing the correct thermodynamic potential and investigate the impact of free charge accumulation on the equilibrium performance of ferroelectric-based systems.
url https://doi.org/10.1038/s42005-021-00583-7
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AT bartsoree thermodynamicequilibriumtheoryrevealingincreasedhysteresisinferroelectricfieldeffecttransistorswithfreechargeaccumulation
AT williamgvandenberghe thermodynamicequilibriumtheoryrevealingincreasedhysteresisinferroelectricfieldeffecttransistorswithfreechargeaccumulation
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