Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy
As an important wide-bandgap semiconductor, gallium nitride (GaN) has attracted considerable attention. This paper describes the use of confocal Raman spectroscopy to characterize undoped GaN, n-type GaN, and p-type GaN through depth profiling using 405-, 532-, and 638-nm wavelength lasers. The Rama...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-06-01
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| Series: | Nanotechnology and Precision Engineering |
| Online Access: | http://dx.doi.org/10.1063/10.0003818 |