Getters in silicon

Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine cont...

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Bibliographic Details
Main Author: Vyacheslav A. Kharchenko
Format: Article
Language:English
Published: Pensoft Publishers 2019-03-01
Series:Modern Electronic Materials
Online Access:https://moem.pensoft.net/article/38575/download/pdf/

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