Getters in silicon
Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine cont...
Main Author: | Vyacheslav A. Kharchenko |
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Format: | Article |
Language: | English |
Published: |
Pensoft Publishers
2019-03-01
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Series: | Modern Electronic Materials |
Online Access: | https://moem.pensoft.net/article/38575/download/pdf/ |
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