Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films
This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al2O3: 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N2 atmosphere at low (1 × 10−23 atm) and high (1 × 10−4 atm) oxygen partial pressures (PO2). In ZnO:Al films with low Al conten...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-02-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/10/2/141 |