Interface characterization of Al2O3/m-plane GaN structure
The interface properties of Al2O3/GaN structures fabricated on the homo-epitaxial m-plane GaN were investigated. An atomically flat surface with a root mean square roughness of 0.15 nm was observed for the m-plane GaN layer on a substrate inclined 5° toward the [000-1] direction. Even for the as-pre...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0031232 |