Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource
SiC was formed using volcanic ash as starting material and concentrated sunlight as energy resource. The solar furnace was composed of two parts: Fresnel lens and reacting furnace. The reacting furnace was composed of a cylindrical vacuum chamber and quartz glass plate functioning to guide the conce...
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doaj-5d228b065d284d1db023972ca267e8fa2020-11-24T23:44:51ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/394605394605Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy ResourceKensuke Nishioka0Junki Komori1Kouji Maeda2Yasuyuki Ota3Hiroshi Kaneko4Kosei Sato5Faculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki 889-2192, JapanFaculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki 889-2192, JapanFaculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki 889-2192, JapanFaculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki 889-2192, JapanFaculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki 889-2192, JapanFaculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai Nishi, Miyazaki 889-2192, JapanSiC was formed using volcanic ash as starting material and concentrated sunlight as energy resource. The solar furnace was composed of two parts: Fresnel lens and reacting furnace. The reacting furnace was composed of a cylindrical vacuum chamber and quartz glass plate functioning to guide the concentrated sunlight into the furnace and was placed at the focal point of the Fresnel lens. The sample was made from the mixture of silica formed from volcanic ash and graphite and placed in the carbon crucible inside the reacting furnace. The temperature in the carbon crucible reached more than 1500°C. After the reaction using concentrated light, β-SiC was formed. The weight % of formed SiC was 90.5%.http://dx.doi.org/10.1155/2015/394605 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Kensuke Nishioka Junki Komori Kouji Maeda Yasuyuki Ota Hiroshi Kaneko Kosei Sato |
spellingShingle |
Kensuke Nishioka Junki Komori Kouji Maeda Yasuyuki Ota Hiroshi Kaneko Kosei Sato Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource International Journal of Photoenergy |
author_facet |
Kensuke Nishioka Junki Komori Kouji Maeda Yasuyuki Ota Hiroshi Kaneko Kosei Sato |
author_sort |
Kensuke Nishioka |
title |
Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource |
title_short |
Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource |
title_full |
Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource |
title_fullStr |
Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource |
title_full_unstemmed |
Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource |
title_sort |
formation of silicon carbide using volcanic ash as starting material and concentrated sunlight as energy resource |
publisher |
Hindawi Limited |
series |
International Journal of Photoenergy |
issn |
1110-662X 1687-529X |
publishDate |
2015-01-01 |
description |
SiC was formed using volcanic ash as starting material and concentrated sunlight as energy resource. The solar furnace was composed of two parts: Fresnel lens and reacting furnace. The reacting furnace was composed of a cylindrical vacuum chamber and quartz glass plate functioning to guide the concentrated sunlight into the furnace and was placed at the focal point of the Fresnel lens. The sample was made from the mixture of silica formed from volcanic ash and graphite and placed in the carbon crucible inside the reacting furnace. The temperature in the carbon crucible reached more than 1500°C. After the reaction using concentrated light, β-SiC was formed. The weight % of formed SiC was 90.5%. |
url |
http://dx.doi.org/10.1155/2015/394605 |
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