Drift-Diffusion Model parameterS Optimization

A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified dir...

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Main Authors:	T. T. Trung, A. M. Borovik, V. R. Stempitsky
Format:	Article
Language:	Russian
Published:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:	наноразмерный моп-транзистор компьютерное моделирование модель подвижности дарвиша оптимизация метод прямого поиска
Online Access:	https://doklady.bsuir.by/jour/article/view/385

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spelling	doaj-5d0865fb937d481cb3d00d32941ef6ba2021-07-28T16:19:49ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01081117384Drift-Diffusion Model parameterS OptimizationT. T. Trung0A. M. Borovik1V. R. Stempitsky2Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиA new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified direct search method of drift-diffusion model optimization for MOSFET with a 90 nm channel length is developed and used.https://doklady.bsuir.by/jour/article/view/385наноразмерный моп-транзисторкомпьютерное моделированиемодель подвижности дарвишаоптимизацияметод прямого поиска
collection	DOAJ
language	Russian
format	Article
sources	DOAJ
author	T. T. Trung A. M. Borovik V. R. Stempitsky
spellingShingle	T. T. Trung A. M. Borovik V. R. Stempitsky Drift-Diffusion Model parameterS Optimization Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki наноразмерный моп-транзистор компьютерное моделирование модель подвижности дарвиша оптимизация метод прямого поиска
author_facet	T. T. Trung A. M. Borovik V. R. Stempitsky
author_sort	T. T. Trung
title	Drift-Diffusion Model parameterS Optimization
title_short	Drift-Diffusion Model parameterS Optimization
title_full	Drift-Diffusion Model parameterS Optimization
title_fullStr	Drift-Diffusion Model parameterS Optimization
title_full_unstemmed	Drift-Diffusion Model parameterS Optimization
title_sort	drift-diffusion model parameters optimization
publisher	Educational institution «Belarusian State University of Informatics and Radioelectronics»
series	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn	1729-7648
publishDate	2019-06-01
description	A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified direct search method of drift-diffusion model optimization for MOSFET with a 90 nm channel length is developed and used.
topic	наноразмерный моп-транзистор компьютерное моделирование модель подвижности дарвиша оптимизация метод прямого поиска
url	https://doklady.bsuir.by/jour/article/view/385
work_keys_str_mv	AT tttrung driftdiffusionmodelparametersoptimization AT amborovik driftdiffusionmodelparametersoptimization AT vrstempitsky driftdiffusionmodelparametersoptimization
_version_	1721267947560763392

Drift-Diffusion Model parameterS Optimization

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