Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates
The VLS (vapor-liquid-solid) method is one of the promising techniques for growing vertical III-V compound semiconductor nanowires on Si for application to optoelectronic circuits. Heterostructures grown in the axial direction by the VLS method and in the radial direction by the general layer-by-la...
Main Authors: | Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, Tetsuomi Sogawa |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2012-01-01
|
Series: | Journal of Nanotechnology |
Online Access: | http://dx.doi.org/10.1155/2012/890607 |
Similar Items
-
Au-free InAs nanowires grown in In-particle-assisted vapor-liquid-solid mode: growth, structure, and electrical property
by: Guoqiang Zhang, et al.
Published: (2013-05-01) -
Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching
by: Hidetaka Asoh, et al.
Published: (2017-07-01) -
Optoelectric investigation of GaInP grown on GaAs substrate
by: CHENG-WEI KO, et al.
Published: (2002) -
Metal-semiconductor properties of MBE grown GaAs on GaAs substrate and its application
by: SHI,BO-WEN, et al.
Published: (1991) -
Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
by: Atomu Fujiwara, et al.
Published: (2018-01-01)