Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
As a promising material for quantum technology, silicon carbide (SiC) has attracted great interest in materials science. Carbon vacancy is a dominant defect in 4H-SiC. Thus, understanding the properties of this defect is critical to its application, and the atomic and electronic structures of the de...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-12-01
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| Series: | Nanotechnology and Precision Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589554020300374 |